TF202THC no.a1285-1/5 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? ultrasmall package facilitates miniaturization in end products. ? especially suited for use in electret condenser microphone for audio equipments and telephones. ? excellent voltage characteristics. ? excellent transient characteristics. ? adoption of fbet process. ? halogen free compliance. speci cations absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit gate-to-drain voltage v gdo --20 v gate current i g 10 ma drain current i d 1ma allowable power dissipation p d 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gdo i g =--100 a --20 v cutoff voltage v gs(off) v ds =5v, i d =1 a --0.2 --0.6 --1.0 v continued on next page. ordering number : ena1285 82008gb ti im tc-00001480 sanyo semiconductors data sheet TF202THC n-channel silicon juncton fet electret condenser microphone applications www.semiconductor-sanyo.com/network www.datasheet.co.kr datasheet pdf - http://www..net/
TF202THC no.a1285-2/5 continued from preceding page. parameter symbol conditions ratings unit min typ max drain current i dss v ds =5v, v gs =0v 140* 350* a forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 0.5 1.0 ms input capacitance ciss v ds =5v, v gs =0v, f=1mhz 3.5 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1mhz 0.65 pf [ta=25c, v cc =4.5v, r l =1k , cin=15pf, see speci ed test circuit.] voltage gain gv v in =10mv, f=1khz --3.0 db reduced voltage characteristic gvv v in =10mv, f=1khz, v cc =4.5v 1.5v --1.2 --3.5 db frequency characteristic gvf f=1khz to 110hz --1.0 db input impedance z in f=1khz 25 m output impedance z o f=1khz 1000 total harmonic distortion thd v in =30mv, f=1khz 1.2 % output noise voltage v no v in =0v, a curve -- 110 db package dimensions test circuit unit : mm (typ) 7031-001 top view bottom view 0.45 1.4 0.8 1.2 0.2 0.2 0.34 0.07 0.07 1 2 3 0.25 0.2 0.1 1 : drain 2 : source 3 : gate sanyo : vtfp * : the TF202THC is classi ed by i dss as follows : (unit : a) marking e4 e5 rank 4 5 i dss 140 to 240 210 to 350 osc 15pf + 33 f voltage gain frequency characteristic distortion reduced voltage characteristic output impedance 1k v cc =4.5v v cc =1.5v v a b vtvm thd 01 8910 234567 500 400 300 200 100 0 i d -- v ds it02310 --0.1v --0.2v --0.4v --0.5v --0.3v 012345 500 400 300 200 100 0 i d -- v ds it03015 v gs =0v --0.1v --0.2v --0.4v --0.5v --0.3v drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a 450 350 250 50 150 450 350 250 50 150 v gs =0v www.datasheet.co.kr datasheet pdf - http://www..net/
TF202THC no.a1285-3/5 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 100 200 300 400 500 v gs (off) -- i dss it02315 -0.30 -0.35 -0.40 -0.45 -0.50 -0.55 -0.60 -0.65 -0.70 0 100 200 300 400 500 v ds =5v i d =1 a 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 100 200 300 400 500 | yfs | -- i dss it02314 v ds =5v v gs =0v f=1khz 10 7 5 3 2 2 1.0 1.0 10 23 57 723 ciss -- v ds it03814 1.0 7 5 3 5 3 2 2 0.1 1.0 10 23 57 723 crss -- v ds it03815 drain current, i dss -- a forward transfer admittance, | y fs | -- ms drain current, i dss -- a cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf v gs =0v f=1mhz v gs =0v f=1mhz --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --0 500 400 300 200 100 0 i d -- v gs i d -- v gs it02312 it02313 v ds =5v 400 320 240 160 80 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 i dss =350 a 250 a 150 a ta=75 c v ds =5v --25 c gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 25 c 450 350 250 50 150 360 280 200 40 120 0 100 200 300 400 500 g v -- i dss it13910 --1.7 --1.5 --1.3 --1.1 --0.9 --0.7 --0.5 g vv -- i dss it13911 g vv : v cc =4.5v 1.5v v in =10mv f=1khz r l =1.0k cin=15pf i dss : v ds =5.0v g v : v cc =4.5v v in =10mv f=1khz r l =1.0k cin=15pf i dss : v ds =5.0v drain current, i dss -- a voltage gain, g v -- db drain current, i dss -- a reduced voltage characteristic, g vv -- db www.datasheet.co.kr datasheet pdf - http://www..net/
TF202THC no.a1285-4/5 0 100 200 300 400 500 27 28 29 30 31 32 26 z in -- i dss it02323 910 920 930 940 950 960 900 z o -- i dss it02324 --119 --118 --117 --116 --115 --114 --113 --112 --111 --120 v no -- i dss it13913 v no : v cc =4.5v v in =0v, acurve r l =1.0k cin=15pf i dss : v ds =5.0v z o : v cc =4.5v v in =10mv f=1khz i dss : v ds =5.0v z in :v cc =4.5v v in =10mv f=1khz i dss : v ds =5.0v 0 100 200 300 400 500 0 100 200 300 400 500 drain current, i dss -- a input impedance, z in -- m drain current, i dss -- a output impedance, z o -- drain current, i dss -- a output noise voltage, v no -- db 0 100 200 300 400 500 0 thd -- i dss it13912 0.5 1.0 1.5 2.0 2.5 drain current, i dss -- a total harmonic distortion, thd -- % 10 1.0 0.1 100 0 50 100 150 200 thd -- v in it02316 thd : v cc =4.5v f=1khz i dss : v ds =5.0v 250 a 350 a i dss =150 a input voltage, v in -- mv total harmonic distortion, thd -- % 80 100 120 40 20 60 0 0 160 140 120 100 80 60 40 20 p d -- ta it02317 ambient temperature, ta -- c allowable power dissipation, p d -- mw thd : v cc =4.5v v in =30mv f=1khz r l =1.0k cin=15pf i dss : v ds =5.0v www.datasheet.co.kr datasheet pdf - http://www..net/
TF202THC no.a1285-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of august, 2008. speci cations and information herein are subject to change without notice. www.datasheet.co.kr datasheet pdf - http://www..net/
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